High-Power 25-Gb/s Electroabsorption Modulator Integrated With a Laser Diode

被引：31

作者：

Takahashi, Hiroyuki ^{[1
]}

Shimamura, Tomonori ^{[2
]}

Sugiyama, Takashi ^{[2
]}

Kubota, Munechika ^{[2
]}

Nakamura, Koji ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, Network Technol Labs, Corp Res & Dev Ctr, Tokyo 1938550, Japan

[2] Oki Semicond Co Ltd, Opt Component Unit, LSI Dev Headquarters, Tokyo 1938550, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 9-12期

关键词：

Electroabsorption (EA) modulator integrated laser diode (LD); high-power electroabsorption modulator integrated laser diode (EML); 100-Gb/s Ethernet; ridge-type laser diode (LD);

D O I：

10.1109/LPT.2009.2015581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-power 1.3-mu m electroabsorption modulator integrated laser diode was developed for 100-Gb/s Ethernet applications. The average output power exceeding 6.5 dBm and clear eye opening with dynamic extinction ratio over 7.6 dB were realized at 35 degrees C.

引用

页码：633 / 635

页数：3

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