Radiation-tolerant breakdown protection of silicon detectors using multiple floating guard rings

被引:16
作者
Beck, GA
Carter, AA
Carter, JR
Greenwood, NM
Lucas, AD
Munday, DJ
Pritchard, TW
Robinson, D
Wilburn, CD
Wyllie, KH
机构
[1] UNIV CAMBRIDGE,CAVENDISH LAB,HEP GRP,CAMBRIDGE CB3 0HE,ENGLAND
[2] UNIV LONDON QUEEN MARY & WESTFIELD COLL,LONDON E1 4NS,ENGLAND
[3] MICRON SEMICOND LTD,CHURCHILL IND ESTATE,LANCING BN15 8UN,ENGLAND
关键词
D O I
10.1016/S0168-9002(97)00749-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Multiple floating guard-ring designs have been optimised for high-voltage operation of silicon detectors, and processed on both single-and double-sided devices. Results are presented on their performance before and after being subjected to both ionising and non-ionising irradiation.
引用
收藏
页码:214 / 227
页数:14
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