200 μm APD OEIC in 0.35 μm BiCMOS

被引：10

作者：

Jukic, T. ^{[1
]}

Steindl, B. ^{[1
]}

Enne, R. ^{[1
]}

Zimmermann, H. ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Electrodynam Microwave & Circuit Engn, Gusshausstr 25-354, A-1040 Vienna, Austria

来源：

ELECTRONICS LETTERS | 2016年 / 52卷 / 02期

关键词：

AVALANCHE PHOTODIODE; CMOS TECHNOLOGY; RECEIVER;

D O I：

10.1049/el.2015.3540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optoelectronic integrated circuit (OEIC) in a 0.35 mu m BiCMOS technology is presented. The receiver designed for optical wireless communication and communication over plastic optical fibre for data rates up to 2 Gbit/s has a 200 mu m diameter avalanche photodiode (APD). Thanks to a thick intrinsic zone the APD has a low capacitance of 0.5 pF. The chip requires a supply voltage of 3.3 V and has a current consumption of 76 mA. The OEIC provides a single-ended output swing of 550 mV on 50 Omega and a total transimpedence of 260 k Omega with a bandwidth of 1.08 GHz. The OEIC achieves a sensitivity of -32.2 dBm at a BER of 10(-9) for a data rate of 2 Gbit/s.

引用

页码：128 / 129

页数：2

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