Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on AlN/6H-SiC(0001) substrates

被引：73

作者：

Perry, WG ^{[1
]}

Zheleva, T ^{[1
]}

Bremser, MD ^{[1
]}

Davis, RF ^{[1
]}

Shan, W ^{[1
]}

Song, JJ ^{[1
]}

机构：

[1] OKLAHOMA STATE UNIV,LASER RES CTR,STILLWATER,OK 74078

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 03期

关键词：

biaxial strain; donor bound excitons; gallium nitride (GaN); organometallic vapor phase epitaxy (OMVPE); photoluminescence (PL); Poisson's ratio; transmission electron microscopy (TEM); x-ray diffraction;

D O I：

10.1007/s11664-997-0155-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Biaxial strains resulting from mismatches in thermal expansion coefficients and lattice parameters in 22 GaN films grown on AlN buffer layers previously deposited on vicinal and on-axis 6H-SiC(0001) substrates were measured via changes in the c-axis lattice parameter. A Poisson's ratio of v = 0.18 was calculated. The bound exciton energy (E(BX)) was a linear function of these strains. The shift in E(BX) with film stress was 23 meV/GPa. Threading dislocations densities of similar to 10(10)/cm(2) and similar to 10(8)/cm(2) were determined for GaN Rims grown on vicinal and on-axis SiC, respectively. A 0.9% residual compressive strain at the GaN/AlN interface was observed by high resolution transmission electron microscopy (HRTEM).

引用

页码：224 / 231

页数：8

共 43 条

[1]

AMANO H, 1988, JPN J APPL PHYS, V27, pL1484

[2] Elastic constants of III-V compound semiconductors: Modification of Keyes' relation [J].