Optical data storage in InGaN/GaN heterostructures

被引：12

作者：

Shmagin, IK ^{[1
]}

Muth, JF ^{[1
]}

Kolbas, RM ^{[1
]}

Dupuis, RD ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Park, J ^{[1
]}

Shelton, BS ^{[1
]}

Lambert, DJH ^{[1
]}

机构：

[1] UNIV TEXAS,MICROELECT RES CTR,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 10期

关键词：

D O I：

10.1063/1.119900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical storage data was realized using an InGaN/GaN single heterostructure. It was observed that exposure to a high power density ultraviolet light temporarily changes the optical properties of the InGaN epitaxial layer. The photo-induced changes can be observed under an optical microscope with low intensity ultraviolet excitation. This effect was used to create high contrast optical patterns on the sample at room temperature and 77 K. The photo-induced changes completely disappear in about four hours at room temperature. After the recorded pattern is erased. the information can be rewritten without a change in efficiency or retention time. (C) 1997 American Institute of Physics.

引用

页码：1382 / 1384

页数：3

共 9 条

[1]

GRUDOWSKI PA, UNPUB APPL PHYS LETT

[2] Optical memory effect in GaN epitaxial films [J].