Hot-hole induced negative oxide charges in n-MOSFET's - Reply

被引：0
|
作者：
Weber, W
Brox, M
Thewes, R
Saks, NS
机构：
[1] SIEMENS COMPONENTS INC,ESSEX JCT,VT 05452
[2] USN,RES LABS,WASHINGTON,DC 20375
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 09期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1474 / 1477
页数：4
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