Annealing of radiation defects in dual-implanted silicon

被引：3

作者：

Kozlov, IP

Odzhaev, VB

Popok, VN

Hnatowicz, V

机构：

[1] BELARUSSIAN STATE UNIV, DEPT PHYS, MINSK 220050, BELARUS

[2] ACAD SCI CZECH REPUBL, INST NUCL PHYS, CR-25068 PRAGUE, CZECH REPUBLIC

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 05期

关键词：

D O I：

10.1088/0268-1242/11/5/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon samples dual implanted with B+ + N+ and B+ + Ar+ ions and then furnace annealed at temperatures up to 900 degrees C were studied using RBS and EPR. An anomalous decrease of defect concentration after subsequent implantation with boron and nitrogen ions to the same dose (1.2 x 10(15) cm(-2)) was observed due to radiation annealing. A transformation of simple point defects to pentavacancies during annealing was found, which depends on the degree of silicon amorphization. The defect annealing temperature was found to be a function of the dose and ion species combination in the first and second implantations.

引用

页码：722 / 725

页数：4

共 22 条

[11] BORON AND ANTIMONY CODIFFUSION IN SILICON [J].

MARGESIN, B ;

CANTERI, R ;

SOLMI, S ;

ARMIGLIATO, A ;

BARUFFALDI, F .

JOURNAL OF MATERIALS RESEARCH, 1991, 6 (11) :2353-2361

[12]

MULLER H, 1973, P S ION IMPL SEM MAT, P203

[13] REDUCTION OF TRANSIENT BORON-DIFFUSION IN PREAMORPHIZED SI BY CARBON IMPLANTATION [J].

NISHIKAWA, S ;

TANAKA, A ;

YAMAJI, T .

APPLIED PHYSICS LETTERS, 1992, 60 (18) :2270-2272

[14]

ODZHAEV VB, 1996, IN PRESS APPL PHYS A

[15] DUAL IMPLANTATION OF SILICON WITH BORON AND AGRON IONS [J].

POPOK, V ;

HNATOWICZ, V ;

KVITEK, J ;

SVORCIK, V ;

RYBKA, V .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 141 (01) :93-98

[16] DEFECTS FORMATION IN THE DUAL B+ AND N+ IONS IMPLANTED SILICON [J].

POPOK, V ;

ODZHAEV, V ;

HNATOWICZ, V ;

KVITEK, J ;

SVORCIK, V ;

RYBKA, V .

CZECHOSLOVAK JOURNAL OF PHYSICS, 1994, 44 (10) :949-956

[17]

RYSEL H, 1986, ION IMPLANTATION

[18] EFFECT OF ARGON IMPLANTATION ON CONDUCTIVITY OF BORON IMPLANTED SILICON [J].

SANDERS, IR ;

WILLIAMS, BD ;

SMITH, BJ ;

STEPHEN, J ;

HINDER, GW .

SOLID-STATE ELECTRONICS, 1977, 20 (08) :703-707

[19] CODIFFUSION OF ARSENIC AND BORON-IMPLANTED IN SILICON [J].

SOLMI, S ;

VALMORRI, S ;

CANTERI, R .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) :2400-2406

[20]

STELMAKH VF, 1985, PHYS TEKH POLUPROV, V9, P1860

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