The conversion of wettability in transparent conducting Al-doped ZnO thin film

被引:11
作者
Cho, Yong Chan [1 ,2 ]
Cha, Su-Young [1 ,2 ]
Shin, Jong Moon [1 ,2 ]
Park, Jeong Hun [3 ]
Park, Sang Eon [4 ]
Cho, Chae Ryong [1 ,2 ]
Park, Sungkyun [5 ]
Pak, Hyuk K. [5 ]
Jeong, Se-Young [1 ,2 ]
Lim, Ae-Ran [6 ]
机构
[1] Pusan Natl Univ, Team BK21, Miryang 627706, South Korea
[2] Pusan Natl Univ, Dept Nano Fus Technol, Miryang 627706, South Korea
[3] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[4] Pusan Natl Univ, MCLab Co Ltd, Miryang 627706, South Korea
[5] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
[6] Jeonju Univ, Dept Sci Educ, Jeonju 560759, South Korea
关键词
Transparent conductive oxides; Wettability; Water contact angle; Conductivity; LIGHT-EMITTING DEVICES; SURFACE;
D O I
10.1016/j.ssc.2009.01.029
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report on the systematic changes of surface wettability in one of the most promising transparent conducting oxide materials, AI-doped ZnO (AZO) thin films. It was revealed that the characteristic surface wettability, which would make a key role in adhesion with other layers of optoelectronic device, can be largely changed by AI concentrations and film growth temperature. Keeping the electrical conductivity constant, the water contact angle (WCA) of a 2 mol% AZO film was changed by about 50 degrees C depending on the surface roughness. In the samples grown at 300 degrees C, the roughness enhancement was large and a hydrophobic surface formed, whereas in the samples grown at 500 degrees C a hydrophilic surface formed. We attributed the variation in surface wettability with growth temperature to changes in surface morphology. This result suggests that 2 mol% AI doping concentration can be considered as a critical concentration in changing of surface morphology of AZO as well as in electrical properties. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:609 / 611
页数:3
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