The Changing Colors of a Quantum-Confined Topological Insulator

被引:38
作者
Vargas, Anthony [1 ]
Basak, Susmita [1 ]
Liu, Fangze [1 ]
Wang, Baokai [1 ]
Panaitescu, Eugen [1 ]
Lin, Hsin [1 ]
Markiewicz, Robert [1 ]
Bansil, Arun [1 ]
Kar, Swastik [1 ]
机构
[1] Northeastern Univ, Dept Phys, Boston, MA 02115 USA
基金
美国国家科学基金会;
关键词
topological insulators; bismuth selenide; band gap; chemical vapor deposition; quantum dots; TOTAL-ENERGY CALCULATIONS; SINGLE DIRAC CONE; BI2SE3;
D O I
10.1021/nn404013d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Bismuth selenide (Bi2Se3) is a 3D topological insulator, its strong spin orbit coupling resulting in the well-known topologically protected coexistence of gapless metallic surface states and semiconducting bulk states with a band gap, E-g similar or equal to 300 meV. A fundamental question of considerable importance is how the electronic properties of this material evolve under nanoscale confinement We report on catalyst-free, high-quality single-crystalline Bi2Se3 with controlled lateral sizes and layer thicknesses that could be tailored down to a few nanometers and a few quintuple layers (QLs), respectively. Energy-resolved photoabsorption spectroscopy (1.5 eV < E-photon < 6 eV) of these samples reveals a dramatic evolution of the photon absorption spectra as a function of size, transitioning from a featureless metal-like spectrum in the bulk (corresponding to a visually gray color), to one with a remarkably large band gap (E-g >= 2.5 eV) and a spectral shape that correspond to orange-red colorations in the smallest samples, similar to those seen in semiconductor nanostructures. We analyze this colorful transition using ab initio density functional theory and tight-binding calculations which corroborate our experimental findings and further suggest that while purely 2D sheets of few QL-thick Bi2Se3 do exhibit small band gaps that are consistent with previous ARPES results, the presently observed large gaps of a few electronvolts can only result from a combined effect of confinement in all three directions.
引用
收藏
页码:1222 / 1230
页数:9
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