Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region

被引：10
|
作者：
Pitthan, E. [1 ]
Lopes, L. D. [2 ]
Palmieri, R. [3 ]
Correa, S. A. [1 ]
Soares, G. V. [1 ,3 ]
Boudinov, H. I. [1 ,3 ]
Stedile, F. C. [1 ,2 ]
机构：
[1] Univ Fed Rio Grande do Sul, PGMICRO, BR-91509900 Porto Alegre, RS, Brazil
[2] Univ Fed Rio Grande do Sul, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil
[3] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509900 Porto Alegre, RS, Brazil
来源：
APL MATERIALS | 2013年 / 1卷 / 02期
关键词：
SILICON-CARBIDE; 4H-SIC/SIO2; INTERFACE; SIO2/SIC INTERFACE; HYDROGEN-PEROXIDE; SEMICONDUCTOR; OXIDATION; MECHANISMS; TRANSPORT; BANDGAP; WET;
D O I：
10.1063/1.4817896
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure. Results from nuclear reaction analyses were correlated to those from electrical measurements. Although the increase in the flatband voltage shift and in the film thickness were related to the oxidation parameters, the results exclude the thickness of the SiO2/4H-SiC interfacial region and the amount of residual oxygen compounds present on the SiC surface as the main cause of the electrical degradation from the SiC oxidation. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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页数：7
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