Transmission Electron Microscopy Study on the Crystallization of Sb-Se-Te Ternary Alloys

被引：4

作者：

Yoon, Jong Moon ^{[1
]}

Kim, Eun Tae ^{[1
]}

Lee, Jeong Yong ^{[1
]}

Kim, Yong Tae ^{[2
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Korea Inst Sci & Technol, Semicond Mat & Devices Lab, Seoul 136791, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 10期

关键词：

ATOMIC-FORCE MICROSCOPY; PHASE-CHANGE; THIN-FILMS; CHALCOGENIDE GLASSES; GRAIN-GROWTH; NONVOLATILE; TRANSITIONS; NUCLEATION;

D O I：

10.1143/JJAP.48.105501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of Sb-Se-Te ternary alloy thin films annealed at 220, 230, and 300 degrees C by rapid thermal annealing (RTA) was investigated using high-resolution transmission election microscopy (HR-TEM) and X-ray diffraction (XRD) analysis. Compared to the T-m of Ge2Sb2Te5 (similar to 616 degrees C), the lower T-m of the Sb-Se-Te (417 degrees C) thin film can contribute toward reducing power consumption for the reset process of phase change materials. The horizontal long grains-grown along the interface in a fully crystallized Sb-Se-Te thin film sample and annealed at 300 degrees C for 10 min-were hexagonal structured Sb2SeTe2 with 15 layers; the c-axis was perpendicular to the substrate. (C) 2009 The Japan Society of Applied Physics

引用

页码：1055011 / 1055013

页数：3

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