Temperature effect on structural, morphological and optical properties of 2D-MoS2 layers: An experimental and theoretical study

被引:18
作者
Jlidi, Zaineb [1 ]
Baachaoui, Sabrine [2 ]
Raouafi, Noureddine [2 ]
Ridene, Said [1 ]
机构
[1] Tunis El Manar Univ, Fac Sci Tunis, Adv Mat & Quantum Phenomena Lab, Dept Phys, Tunis 2092, Tunisia
[2] Univ Tunis El Manar, Sensors & Biosensors Grp, Analyt Chem & Electrochem Lab LR99ES15, Dept Chem, Tunis El Manar 2092, Tunisia
来源
OPTIK | 2021年 / 228卷
关键词
2D-MoS2; nanosheets; Structural; Morphological; Band structure; Optical gain; Lasers; MOS2; PERFORMANCE; LIGHT;
D O I
10.1016/j.ijleo.2020.166166
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this work, we present experimental and theoretical studies of the effect of temperature on the structural, morphological and optical performance of 2D-MoS2 nanosheets. We have used X-ray diffraction, Raman, photoluminescence spectroscopies and electron transmission microscopy to study the structural, morphologic and optical properties of MoS2 synthesized by hydrothermal method. The results indicate that, the structuraland optical properties are significantly temperature-dependent. The number of MoS2-layers has been estimated from the Raman frequencies of the E-2g(1) and A(1g) vibration modes. For the theoretical study we have used k.p and density matrix to calculate the band structure and optical gain for the 2D-MoS2. It is found that the nanosheets exhibit a significant enhancement in the TE-polarized optical gain at room temperature. These results show that 2D-MoS2 layered is promoters for laser device.
引用
收藏
页数:9
相关论文
共 40 条
[1]  
Ahmed A., 2016, INT J LIGHT ELECT OP, V127, P1198
[2]  
Alam K., 2012, IEEE T ELECTRON DEV, V59, P3250
[3]   THE EFFECTS OF LOSS AND NONRADIATIVE RECOMBINATION ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN 1.5-1.6-MU-M GALNASP/INP LASERS [J].
ASADA, M ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :917-923
[4]   Theory of neutral and charged excitons in monolayer transition metal dichalcogenides [J].
Berkelbach, Timothy C. ;
Hybertsen, Mark S. ;
Reichman, David R. .
PHYSICAL REVIEW B, 2013, 88 (04)
[5]  
Bernardi M., 2013, NANO LETT, V13, P3664
[6]  
Bolhuis M., 2020, NANOSCALE, V12, P10491
[7]   Optical identification of atomically thin dichalcogenide crystals [J].
Castellanos-Gomez, A. ;
Agrait, N. ;
Rubio-Bollinger, G. .
APPLIED PHYSICS LETTERS, 2010, 96 (21)
[8]  
Chakraborty B., 2013, J RAMAN SPECTROSC, V44, P92
[9]   Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates [J].
Chan, Mei Yin ;
Komatsu, Katsuyoshi ;
Li, Song-Lin ;
Xu, Yong ;
Darmawan, Peter ;
Kuramochi, Hiromi ;
Nakaharai, Shu ;
Aparecido-Ferreira, Alex ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Tsukagoshi, Kazuhito .
NANOSCALE, 2013, 5 (20) :9572-9576
[10]   High Performance Multilayer MoS2 Transistors with Scandium Contacts [J].
Das, Saptarshi ;
Chen, Hong-Yan ;
Penumatcha, Ashish Verma ;
Appenzeller, Joerg .
NANO LETTERS, 2013, 13 (01) :100-105