Comparing different geometries for photovoltaic-thermoelectric hybrid devices based on organics

被引:10
作者
Jurado, Jose P. [1 ]
Dorling, Bernhard [1 ]
Zapata-Arteaga, Osnat [1 ]
Goni, Alejandro R. [1 ]
Campoy-Quiles, Mariano [1 ]
机构
[1] Mat Sci Inst Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, Spain
基金
欧洲研究理事会; 欧盟地平线“2020”;
关键词
CHARGE-CARRIER MOBILITY; SOLAR-CELLS; THERMAL-CONDUCTIVITY; LIGHT-MANAGEMENT; PERFORMANCE; POLYMER;
D O I
10.1039/d0tc05067a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Coupling thermoelectrics (TE) with photovoltaics (PV) has emerged as an approach to solid-state solar harvesting, directly converting light and infrared heat into electricity. In this work, we compare PV-TE hybrid devices based on organic semiconductors in three different geometries: a reflection geometry, a non-contact transmission geometry, and a contact transmission geometry. The temperature rises of films of common organic thermoelectric materials, including poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), single-walled carbon nanotubes (swCNT), and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT), were measured in configurations representative of the proposed geometries. Because organic semiconductors possess broadband light absorption and low thermal conductivities, a significant rise in temperature was observed under illumination for all geometries. We find, however, that the best configuration is, in fact, the transmission contact mode because it sums two effects. Operating under 1 sun illumination, the temperature of a commercial organic PV module increased by approximate to 30 K, which leads to an enhancement in OPV performance compared to room temperature. After attaching a thermoelectric to the OPV module, losses from convection are reduced, and the OPV module heats up even more, further increasing its efficiency while additionally enabling thermoelectric generation. Finally, we calculate theoretical thermoelectric efficiencies for the materials and their respective power densities.
引用
收藏
页码:2123 / 2132
页数:10
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