In-Situ Pulsed Laser Interference Nanostructuring of Semiconductor Surfaces

被引：0

作者：

Wang, Yun-Ran ^{[1
]}

Han, Im Sik ^{[1
]}

Jin, Chao-Yuan ^{[1
,2
]}

Hopkinson, Mark ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S3 7HQ, S Yorkshire, England

[2] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou 310007, Peoples R China

来源：

JOURNAL OF LASER MICRO NANOENGINEERING | 2020年 / 15卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

direct laser interference patterning; multi-beam interference; nanostructures; III-V semi-conductors; quantum dots; molecular beam epitaxy; BEAM LITHOGRAPHY;

D O I：

10.2961/jlmn.2020.02.2011

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the fabrication of periodic one- and two-dimensional nanostructures on semiconductor surfaces utilizing in-situ single-pulse direct laser interference patterning during molecular beam epitaxial growth. A Nd:YAG laser operating at 355 nm wavelength with a pulse duration of 7 ns is used to produce periodic gratings or nanoislands with a submicron periodicity on the growing InAs/GaAs surfaces. By means of four-beam interference patterning, ordered square arrays of quantum dots with a lattice pitch of 200-300 nm are obtained. This in-situ technique offers a new way to control the quantum dot nucleation sites and it constitutes a technological advance to realize periodic III-V semiconductor nanostructures with impact in optoelectronics and quantum information processing.

引用

页码：139 / 142

页数：4

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