Water interaction with thermally oxidized porous silicon layers

被引:40
作者
Zangooie, S
Bjorklund, R
Arwin, H
机构
[1] Laboratory of Applied Physics, Dept. of Phys. and Msrmt. Technology, Linköping University
关键词
D O I
10.1149/1.1838130
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Water vapor adsorption and liquid penetration into thermally oxidized porous silicon films were studied by variable angle spectroscopic ellipsometry. Characterization of the surfaces in air combined with multilayer optical modeling showed the existence of a gradient in the volume porosity and bulk-like silicon skeleton in the layers. Films oxidized at 300 degrees C contained a thin oxide layer and further oxidation at 800 degrees C resulted in an almost total oxidation of the silicon skeleton, which yielded an increased hydrophilicity and an almost complete pore filling by water both from saturated atmospheres and from a liquid phase. Total water adsorption per gram adsorbent at saturation was 0.50 cm(3)/g for the 300 degrees C samples and 0.45 cm(3)/g for the totally oxidized films. Oxidation at 800 degrees C resulted in a surface area of 72 m(2)/g deter mined by a modified Brunauer-Emmett-Teller procedure.
引用
收藏
页码:4027 / 4035
页数:9
相关论文
共 54 条
[1]   LAYERED STRUCTURE OF LUMINESCENT POROUS SILICON [J].
AMBRAZEVICIUS, G ;
ZAICEVAS, G ;
JASUTIS, V ;
LESCINSKAS, D ;
LIDEIKIS, T ;
SIMKIENE, I ;
GULBINAITE, D .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) :5442-5446
[2]  
BANGERT U, 1995, PHYS STATUS SOLIDI B, V190, P69, DOI 10.1002/pssb.2221900111
[3]   THE DETERMINATION OF PORE VOLUME AND AREA DISTRIBUTIONS IN POROUS SUBSTANCES .1. COMPUTATIONS FROM NITROGEN ISOTHERMS [J].
BARRETT, EP ;
JOYNER, LG ;
HALENDA, PP .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1951, 73 (01) :373-380
[4]   X-ray diffraction studies of porous silicon [J].
Bellet, D ;
Dolino, G .
THIN SOLID FILMS, 1996, 276 (1-2) :1-6
[5]   A MICROSTRUCTURAL STUDY OF POROUS SILICON [J].
BERBEZIER, I ;
HALIMAOUI, A .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) :5421-5425
[6]   Dielectric filters made of PS: Advanced performance by oxidation and new layer structures [J].
Berger, MG ;
ArensFischer, R ;
Thonissen, M ;
Kruger, M ;
Billat, S ;
Luth, H ;
Hilbrich, S ;
Theiss, W ;
Grosse, P .
THIN SOLID FILMS, 1997, 297 (1-2) :237-240
[7]   Color changes in thin porous silicon films caused by vapor exposure [J].
Bjorklund, RB ;
Zangooie, S ;
Arwin, H .
APPLIED PHYSICS LETTERS, 1996, 69 (20) :3001-3003
[8]   Adsorption of surfactants in porous silicon films [J].
Bjorklund, RB ;
Zangooie, S ;
Arwin, H .
LANGMUIR, 1997, 13 (06) :1440-1445
[9]   PORE-SIZE DISTRIBUTION IN POROUS SILICON STUDIED BY ADSORPTION-ISOTHERMS [J].
BOMCHIL, G ;
HERINO, R ;
BARLA, K ;
PFISTER, JC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1611-1614
[10]   SCANNING STUDIES ON CAPILLARY CONDENSATION AND EVAPORATION OF NITROGEN .2. ANALYSIS OF ASCENDING AND DESCENDING SCANNING CURVES WITHIN B-TYPE HYSTERESIS LOOPS [J].
BROEKHOFF, JCP ;
VANBEEK, WP .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1979, 75 :42-&