Packaging a W -Band Integrated Module With an Optimized Flip-Chip Interconnect on an Organic Substrate

This paper, for the first time, presents successful integration of a W -band antenna with an organically flip-chip packaged silicon-germanium (SiGe) low-noise amplifier (LNA). The successful integration requires an optimized flip-chip interconnect. The interconnect performance was optimized by modeling and characterizing the flip-chip transition on a low-loss liquid crystal polymer organic substrate. When the loss of coplanar waveguide (CPW) lines is included, an insertion loss of 0.6 dB per flip-chip-interconnect is measured. If the loss of CPW lines is de-embedded, 0.25 dB of insertion loss is observed. This kind of low-loss flip-chip interconnect is essential for good performance of W -band modules. The module, which we present in this paper, consists of an end-fire Yagi-Uda antenna integrated with an SiGe BiCMOS LNA. The module is 3 mm x 1.9 mm and consumes only 19.2 mW of dc power. We present passive and active E-and H -plane radiation pattern measurements at 87, 90, and 94 GHz. Passive and active antennas both showed a 10-dB bandwidth of 10 GHz. The peak gain of passive and active antennas was 5.2 dBi at 90 GHz and 21.2 dBi at 93 GHz, respectively. The measurements match well with the simulated results.