The Ferroelectric Field Effect Transistor Simulation and Analysis

被引：0

作者：

Wang, Qiang ^{[2
]}

Zhang, Sun-haochen ^{[3
]}

Yu, Zhengdong ^{[3
]}

Hua, Guoran ^{[1
]}

机构：

[1] Nantong Univ, Sch Mech Engn, Nantong 226019, Peoples R China

[2] Nantong Univ, Sch Elect & Informat, Nantong 226019, Peoples R China

[3] Nantong Univ, Sch Comp Sci, Nantong 226019, Peoples R China

来源：

EIGHTH CHINA NATIONAL CONFERENCE ON FUNCTIONAL MATERIALS AND APPLICATIONS | 2014年 / 873卷

关键词：

Simulation; FFET; Polarization Voltage; Coercive Voltage; Drain Current;

D O I：

10.4028/www.scientific.net/AMR.873.850

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A ferroelectric field effect transistor (FFET) with the metal/ferroelectric/ semiconductor (MFS) structure is designed and simulated. The simulation results show that the drain current at V-g=0 after polarized is decided by P-r and P-r/P-s. When increasing P-r, I-d enhanced. When P-r/P-s decreases, I-d increases if the FFET is saturated. When a voltage (V-p=1.5v) is applied on the FFET, I-d may be stable and not sensitive to the variation of P-r/P-s. This FFET stable output voltage is decided by E-c.

引用

页码：850 / +

页数：2

共 8 条

[1] Properties of PbLa(Zr,Sn,Ti)O3 ceramics near ferroelectric-antiferroelectric phase boundary [J].

Dai, ZH ;

Yao, X ;

Xu, Z ;

Feng, YJ ;

Wang, J .

CHINESE SCIENCE BULLETIN, 2006, 51 (08) :1000-1004

[2] Memory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag/Bi4Ti3O12/p-Si gate [J].

Hua, W ;

Ren, MF .

ACTA PHYSICA SINICA, 2006, 55 (03) :1512-1516

[3]

Ishiwara Hiroshi, 2009, CURRENT APPL PHYS, V9, pS2

[4] DEVICE MODELING OF FERROELECTRIC CAPACITORS [J].

MILLER, SL ;

NASBY, RD ;

SCHWANK, JR ;

RODGERS, MS ;

DRESSENDORFER, PV .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) :6463-6471

[5] Ferroelectric memories today [J].

Scott, JF .

FERROELECTRICS, 2000, 236 (1-4) :247-258

[6] The effect of baking temperature on the crystal structure and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by sol-gel processing [J].

Wang, QA ;

Shen, MR ;

Fang, H ;

Gan, ZQ .

ACTA PHYSICA SINICA, 2004, 53 (07) :2373-2377

[7]

Yan Lei, 2000, CHINESE J SEMICONDUC, V21, P1203

[8] Electron emission from La-doped Pb(Zr,Sn,Ti)O3 anti-ferroelectrics by pulse electric field and the relevant physical mechanism [J].

Zhang LinLi ;

Feng YuJun ;

Xu Zhuo ;

Sheng ZhaoXuan .

CHINESE SCIENCE BULLETIN, 2009, 54 (19) :3489-3493

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