Microdischarge devices fabricated in silicon

被引:113
作者
Frame, JW
Wheeler, DJ
DeTemple, TA
Eden, JG
机构
[1] Dept. of Elec. and Comp. Engineering, Everilt Laboratory, University of Illinois, Urbana
关键词
D O I
10.1063/1.119614
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cylindrical microdischarge cavities 200-400 mu m in diameter and 0.5-5 mm in depth have been fabricated in silicon and operated at room temperature with neon or nitrogen at specific power loadings beyond 10 kW/cm(3). The discharges are azimuthally uniform and stable operation at N-2 and Ne pressures exceeding 1 atm and similar to 600 Torr, respectively, has been realized for 400 mu m diameter devices. Spectroscopic measurements on neon discharges demonstrate that the device behaves as a hollow cathode discharge for pressures >50 Torr. As evidenced by emission from Ne and Ne+ (P-2,F-2) states as well as N-2 (C-->B) fluorescence (316-492 nm), these discharge devices are intense sources of ultraviolet and visible radiation and are suitable for fabrication as arrays. (C) 1997 American Institute of Physics.
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页码:1165 / 1167
页数:3
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