High-performance YbTixOy/PbZr0.53Ti0.47O3stacked gate dielectric for InGaZnO thin-film transistors

被引：0
作者：
Pan, Tung-Ming [1 ,2 ]
Wang, Hung-Chun [1 ]
Her, Jim-Long [3 ]
Lou, Bih-Show [4 ,5 ,6 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan
[2] Chang Gung Mem Hosp, Div Urol, Taoyuan 33305, Taiwan
[3] Chang Gung Univ, Ctr Gen Educ, Div Nat Sci, Taoyuan 33302, Taiwan
[4] Chang Gung Univ, Ctr Gen Educ, Chem Div, Taoyuan 33302, Taiwan
[5] Chang Gung Mem Hosp, Dept Nucl Med, Taoyuan 33305, Taiwan
[6] Chang Gung Mem Hosp, Mol Imaging Ctr, Taoyuan 33305, Taiwan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2020年 / 35卷 / 10期
关键词：
indium-gallium-zinc-oxide (InGaZnO); PbZr0.53Ti0.47O3(PZT); stacked gate dielectric; thin-film transistor; YbTixOy; CHEMICAL-VAPOR-DEPOSITION; CAPACITANCE; STABILITY;
D O I：
10.1088/1361-6641/abab1c
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we developed a high-performance YbTixOy/PbZr0.53Ti0.47O3(PZT) stacked gate dielectric for indium-gallium-zinc-oxide (InGaZnO) thin-film transistor (TFT) devices. X-ray diffraction, atomic force microscopy, and x-ray photoelectron spectroscopy were applied to examine the crystal structure, film morphology, and elemental composition of the YbTi(x)O(y)and YbTixOy/PZT stacked films, respectively. Compared with the YbTi(x)O(y)dielectric, the InGaZnO TFT device with the YbTixOy/PZT stacked dielectric exhibited excellent electrical characteristics in terms of a lower subthreshold swing of 77 mV decade(-1), a higher I-on/I(off)current ratio of 3.8 x 10(9), a smaller threshold voltage of 80 mV, and a larger field-effect mobility of 21.2 cm(2)V-s(-1). These results are attributed to the YbTixOy/PZT stacked film possessing the high-kappa value as well as the smooth interface between the channel layer and dielectric.
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页数：8
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