Coulomb drag in topological insulator films

被引：9
作者：
Liu, Hong [1 ]
Liu, Weizhe Edward [2 ]
Culcer, Dimitrie [2 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, ICQD, Hefei 230026, Anhui, Peoples R China
[2] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2016年 / 79卷
基金：
中国国家自然科学基金;
关键词：
Electron-electron interactions; Coulomb drag; Topological insulator; THIN-FILMS; ELECTRICAL DETECTION; SURFACE CONDUCTION; TRANSPORT; BI2SE3; GRAPHENE; SUPERCONDUCTORS; PHASE;
D O I：
10.1016/j.physe.2015.11.027
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study Coulomb drag between the top and bottom surfaces of topological insulator films. We derive a kinetic equation for the thin-film spin density matrix containing the full spin structure of the two-layer system, and analyze the electron-electron interaction in detail in order to recover all terms responsible for Coulomb drag. Focusing on typical topological insulator systems, with a film thicknesses d up to 6 nm, we obtain numerical and approximate analytical results for the drag resistivity rho(D) and find that rho(D) is proportional to T(2)d(-4)n(a)(-3/2)n(p)(-3/2) at low temperature T and low electron density n(a,p), with a denoting the active layer and p the passive layer. In addition, we compare rho(D) with graphene, identifying qualitative and quantitative differences, and we discuss the multi-valley case, ultra thin films and electron-hole layers. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：72 / 79
页数：8
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