The In-Plane Dielectric and Microwave Properties of Barium Stannate Titanate Thin Films

被引：2

作者：

Gao, L. N. ^{[1
]}

Zhai, J. W. ^{[1
]}

Song, S. N. ^{[1
]}

Yao, X. ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

来源：

FERROELECTRICS | 2009年 / 388卷

关键词：

Thin films; sol-gel process; dielectric properties; microwave properties; SOL-GEL PROCESS; CAPACITORS;

D O I：

10.1080/00150190902963781

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microstructure and in-plane dielectric and microwave properties of barium stannate titanate Ba(Sn0.15Ti0.85)O-3 (BTS) thin films grown on c-plane Al2O3 substrates through sol-gel process are investigated. X-ray diffraction and field emission scanning electron microscopy are used to characterize phase structure and microstructure of the thin films, respectively. Using interdigital capacitors (IDC) with Au electrodes on thin films, the dielectric constant and loss tangent as a function of applied voltage (0-40 V) are measured at low frequencies up to 1 MHz. Microwave properties of the films are measured at 10 GHz. This work clearly reveals the highly promising potential of BTS films for application in tunable microwave devices.

引用

页码：60 / 66

页数：7

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