Dielectronic recombination of Xe10+ ions and satellite line of Xe9+ ions

被引：0
|
作者：
Song, Mi-Young [1 ]
Kato, Takako
机构：
[1] Natl Fus Res Ctr, Taejon 305333, South Korea
[2] Natl Inst Fus Sci, Gifu 5095292, Japan
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 49卷
关键词：
dielectronic recombination; satellite line; Xe;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have calculated the energy levels, radiative transition probabilities (Ar), autoionization rates (Aa), and radiative recombination cross section for Xe10+ ions by using the FAC code. The dielectronic recombination rate coefficients from the Xe10+ ions and the related dielectronic satellitie lines are obtained. We studied the n- and l- dependences for Ar, Aa, and alpha(DR). The dielectronic recombination processes from Xe10+ + e -> Xe9+ (4d(7) 4f (1) nl) -> Xe9+ (4d(8) nl) + hw and Xe10+ + e -> Xe9+ (4d(7) 5p(1) nl) -> Xe9+ (4d(8) nl) + hw become important at low plasma temperature T-e approximate to 10 eV for line intensities.
引用
收藏
页码：S374 / S377
页数：4
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