Synthesis of nanocrystalline GaN by the sol-gel method

被引：37

作者：

Qiu, Hailin ^{[1
]}

Cao, Chuanbao ^{[1
]}

Zhu, Hesun ^{[1
]}

机构：

[1] Beijing Inst Technol, Res Ctr Mat Sci, Beijing 100081, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2007年 / 136卷 / 01期

基金：

高等学校博士学科点专项科研基金;

关键词：

gallium nitride; nanopowder; sol-gel; microstructure;

D O I：

10.1016/j.mseb.2006.08.062

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-phase wurtzite GaN nanocrystals with an average diameter of 11 +/- 3 nm were synthesized by the sol-gel technique from readily available Ga(NO3)(3). Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) confirmed they had a hexagonal structure and a narrow size distribution of the nanocrystals. X-ray powder diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurement showed that the GaN powder was of single-phase wurtzite structure with a considerable fraction of structural defects such as twin and stacking faults. The IR spectrum showed that only the Ga-N stretch is present at 600 cm(-1). The EDX pattern of as-prepared product showed their ratio approximate to 1:1. Room temperature photoluminescence (PL) measurement exhibited the band-edge emission of GaN at about 390 nm and defect emission peak at 610 nm. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：33 / 36

页数：4

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