Space charge limited current mechanism in Bi2S3 nanowires

被引：17

作者：

Kunakova, Gunta ^{[1
]}

Viter, Roman ^{[2
]}

Abay, Simon ^{[3
,4
]}

Biswas, Subhajit ^{[5
,6
]}

Holmes, Justin D. ^{[5
,6
]}

Bauch, Thilo ^{[3
]}

Lombardi, Floriana ^{[3
]}

Erts, Donats ^{[1
]}

机构：

[1] Univ Latvia, Inst Chem Phys, Raina Blvd 19, LV-1586 Riga, Latvia

[2] Univ Latvia, Inst Atom Phys & Spect, Raina Blvd 19, LV-1586 Riga, Latvia

[3] Chalmers, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, SE-41296 Gothenburg, Sweden

[4] Lund Univ, Dept Solid State Phys, Box 118, S-22100 Lund, Sweden

[5] Natl Univ Ireland Univ Coll Cork, Dept Chem, Cork, Ireland

[6] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 11期

关键词：

ELECTRICAL CHARACTERIZATION; TEMPERATURE-DEPENDENCE; GAAS NANOWIRES; SINGLE; MEMRISTOR; DENSITY; ARRAYS; TRANSPORT; CRYSTALS; GROWTH;

D O I：

10.1063/1.4944432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the charge transport properties of individual Bi2S3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current-voltage characteristics at several temperatures. (C) 2016 AIP Publishing LLC.

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页数：5

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