Silicon:germanium-based mixed-signal technology for optimization of wired and wireless telecommunications

被引：45

作者：

Meyerson, BS ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 2000年 / 44卷 / 03期

关键词：

D O I：

10.1147/rd.443.0391

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The need to serve the explosion in data bandwidth demand for fixed and mobile applications has driven transistor performance requirements beyond the reach of conventional silicon devices. Scaling limits of silicon-based bipolar transistors have been encountered, confining further performance gains by traditional means, but cost considerations favor the continued use of silicon-derived technology solutions. Silicon: germanium (Si:Ge) heterojunction bipolar transistors (HBTs) and subsequent generations of highly integrated SiGe BICMOS processes stem from long-term efforts initiated at IBM to develop such a silicon-derived technology. This paper reviews the application-driven origins of this SiGe technology, how it has evolved, and how limits to conventional silicon bipolar scaling have enhanced its adoption in the semiconductor industry. Examples of the entry of this technology into commercial applications in the wired and wireless marketplace are discussed.

引用

页码：391 / 407

页数：17

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