Effect of interfacial recombination, bulk recombination and carrier mobility on the J-V hysteresis behaviors of perovskite solar cells: a drift-diffusion simulation study

In organic-inorganic hybrid perovskite solar cells, though the current density-voltage (J-V) hysteresis phenomenon is accepted to be caused by ion migration coupled with charge carrier recombination, there are still rich hysteresis characteristics (various J-V hysteresis loops) remaining to be explained. Here, a systematic drift-diffusion simulation study is conducted to explore the effect of interfacial recombination lifetime (tau(interface)), bulk charge carrier lifetime (tau(bulk)) and mobility (mu) on J-V hysteresis behaviors. The simulation results show that, for devices with only interfacial recombination, the decrease of tau(interface) will lead to J-V hysteresis loops with a large gap on the open circuit side. For devices with only bulk recombination, the drop of tau(bulk) will lead to J-V hysteresis loops with a large gap on the short circuit side. Meanwhile, in both cases, the decrease of mu aggravates the effect of interfacial and bulk recombination, while it has no effect on V-OC. Our simulations reveal the effect of decreased tau(interface), tau(bulk) and mu on the J-V characteristics and explain the hysteresis loops with specific shapes, which have been reported in the literature.