Effect of Ga doping and point defect on magnetism of ZnO

被引：9

作者：

Hou, Qingyu ^{[1
]}

Zhao, Chunwang ^{[2
]}

Jia, Xiaofang ^{[1
]}

Qu, Lingfeng ^{[1
]}

机构：

[1] Inner Mongolia Univ Technol, Coll Sci, Hohhot 010051, Peoples R China

[2] Shanghai Maritime Univ, Coll Arts & Sci, Shanghai 201306, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2017年 / 506卷

基金：

中国国家自然科学基金;

关键词：

Ga doping; Point defect; ZnO; Magnetism; First-principle calculation; DOPED ZNO; 1ST PRINCIPLES; FILMS; SEMICONDUCTORS; FERROMAGNETISM; TEMPERATURE; DEPOSITION; OXIDE;

D O I：

10.1016/j.physb.2016.11.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The combined influence mechanism of Ga doping and Zn vacancy or O vacancy on magnetism of ZnO is studied using the first-principle calculation. The coexistence of Ga doping and Zn vacancy can achieve a Curie temperature higher than room temperature and the Ga doped ZnO system is a p-type diluted degenerate semiconductor with metalized ferromagnetism. The magnetism of the doping system of Ga doping and Zn vacancy is mainly contributed by double-exchange interaction through the holes of Zn vacancy taking carrier as medium. However, the system of Ga doping and O vacancy is non-magnetic. In the coexistence of Ga doping and Zn vacancy or O vacancy, a close relative distance between doping and vacancy will reduce the formation energy of the doping system but increase the easiness of doping and vacancy, as well as enhance the stability of the doping system.

引用

页码：109 / 114

页数：6

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