Preparation of single crystalline regions in amorphous silicon layers on glass by Ar+ laser irradiation

被引：19

作者：

Andrä, G ^{[1
]}

Bergmann, J ^{[1
]}

Falk, F ^{[1
]}

Ose, E ^{[1
]}

机构：

[1] Inst Phys Hochtechnol, D-07745 Jena, Germany

来源：

APPLIED SURFACE SCIENCE | 2000年 / 154卷

关键词：

polycrystalline silicon layers; laser crystallization;

D O I：

10.1016/S0169-4332(99)00413-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By melting amorphous silicon layers on glass by the beam of an Ar+ laser, large grained polycrystalline films as well as single crystalline regions at predefined positions were generated. If the layers are crystallized by scanning a circular laser beam at a rate of up to 5 cm/s the crystal size depends on the overlap between successive scanning traces. The lateral dimensions of the crystals exceed several 10 mu m for an overlap slightly above 50%. Crystals with size dimensions of about 100 mu m were produced by line scanning of a focused laser beam. Large single crystals were obtained by scanning a sickle-shaped or L-shaped beam profile. If the laser is switched on and off repeatedly, single crystalline regions are produced at predefined positions. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

引用

页码：123 / 129

页数：7

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