Defining the composition and electronic structure of large-scale and single-crystalline like Cs2AgBiBr6 films fabricated by capillary-assisted dip-coating method

被引：33

作者：

Xiu, Jingwei ^{[1
]}

Shao, Yangfan ^{[2
,3
]}

Chen, Linxun ^{[1
]}

Feng, Yue ^{[2
]}

Dai, Junfeng ^{[2
]}

Zhang, Xusheng ^{[1
]}

Lin, Yi ^{[1
]}

Zhu, Yudong ^{[1
]}

Wu, Zhenggang ^{[1
]}

Zheng, Yini ^{[1
]}

Pan, Hui ^{[3
]}

Liu, Chang ^{[2
]}

Shi, Xingqiang ^{[2
]}

Cheng, Xin ^{[1
]}

He, Zhubing ^{[1
]}

机构：

[1] Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen Key Lab Full Spectral Solar Elect Genera, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China

[2] Southern Univ Sci & Technol, Dept Phys, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China

[3] Univ Macau, Inst Appl Phys & Mat Engn, Macau, Peoples R China

来源：

MATERIALS TODAY ENERGY | 2019年 / 12卷

基金：

中国国家自然科学基金;

关键词：

Single-crystalline perovskite films; HALIDE DOUBLE PEROVSKITES; SOLAR-CELLS; THIN-FILMS; HIGH-EFFICIENCY; AGBR;

D O I：

10.1016/j.mtener.2019.01.010

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Owning the merits of both lead-free and air-stable, the double-perovskite Cs2AgBiBr6 has attracted increasing attention, but suffers low visible-light absorption coefficient due to its large indirect bandgap. Moreover, the electronic structure of its synthesized films has not been explored clearly yet. In this work, we developed a general and promising method to fabricate continuous, uniform and highly orientated Cs2AgBiBr6 films in large scale on various substrates through capillary-assisted dip-coating method. Strikingly, those optimized films are single crystalline verified by phi-scan XRD. Its electronic structure was carefully studied independently by multi-photo-physical characterizations. Its bandgap can be tuned from 2.65 to 2.25 eV by changing the substrate temperature in growth from 40 to 160 degrees C. Essentially, their work-function (WF) was determined at -5.01 eV and WF-VBM is around 2 eV. This novel band structure with typical n-type characteristic, was further confirmed by DFT calculations, which reveals that the Cs interstitials and Br vacancies derived deep defect levels were fixed around its Fermi level, closer to the conduction band. This conclusion is different from its widely accepted p-type feature, but definitely deepens our understanding of this material and inspires us to find more valuable strategies of modulating its band structure and optoelectronic properties. (C) 2019 Elsevier Ltd. All rights reserved.

引用

页码：186 / 197

页数：12

共 53 条

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