Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor

被引：61

作者：

Wang, Yiping ^{[1
]}

Balgley, Jesse ^{[2
]}

Gerber, Eli ^{[3
]}

Gray, Mason ^{[1
]}

Kumar, Narendra ^{[1
]}

Lu, Xiaobo ^{[2
]}

Yan, Jia-Qiang ^{[4
,5
]}

Fereidouni, Arash ^{[6
]}

Basnet, Rabindra ^{[6
]}

Yun, Seok Joon ^{[7
]}

Suri, Dhavala ^{[8
,9
]}

Kitadai, Hikari ^{[10
]}

Taniguchi, Takashi ^{[11
]}

Watanabe, Kenji ^{[11
]}

Ling, Xi ^{[10
]}

Moodera, Jagadeesh ^{[12
]}

Lee, Young Hee ^{[7
]}

Churchill, Hugh O. H. ^{[6
]}

Hu, Jin ^{[6
]}

Yang, Li ^{[2
,13
]}

Kim, Eun-Ah ^{[14
]}

Mandrus, David G. ^{[4
,5
]}

Henriksen, Erik A. ^{[2
,13
]}

Burch, Kenneth S. ^{[1
]}

机构：

[1] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

[2] Washington Univ, Dept Phys, St Louis, MO 63130 USA

[3] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[4] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[5] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

[6] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[7] Sungkyunkwan Univ, Ctr Integrated Nanostruct Phys, Suwon, Gyeonggi Do, South Korea

[8] MIT, Francis Bitter Magnet Lab, Cambridge, MA 02139 USA

[9] MIT, Plasma Sci & Fus Ctr, Cambridge, MA 02139 USA

[10] Boston Univ, Dept Chem, Boston, MA 02215 USA

[11] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[12] MIT, Dept Phys, Cambridge, MA 02139 USA

[13] Washington Univ, Inst Mat Sci & Engn, St Louis, MO 63130 USA

[14] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA

来源：

NANO LETTERS | 2020年 / 20卷 / 12期

基金：

美国国家科学基金会;

关键词：

Modulation Doping; 2D Atomic Crystals; Raman; Chemical Vapor Deposition; Molecular Beam Epitaxy; Quantum Oscillations; RuCl3; GRAPHENE; SCATTERING; TRANSPORT; LIQUID;

D O I：

10.1021/acs.nanolett.0c03493

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Two-dimensional nanoelectronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations establish the large work function and narrow bands of alpha-RuCl3 enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe2, and molecular beam epitaxy grown EuS. We further demonstrate proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride. Short-ranged lateral doping (<= 65 nm) and high homogeneity are achieved in proximate materials with a single layer of alpha-RuCl3. This leads to the best-reported monolayer graphene mobilities (4900 cm(2) /(V s)) at these high hole densities (3 X 10(13) cm(-2) ) and yields larger charge transfer to bilayer graphene (6 x 10(13) cm(-2)).

引用

页码：8446 / 8452

页数：7

共 39 条

[1] Neutron scattering in the proximate quantum spin liquid α-RuCl3 [J].