Multiwavelength High-Detectivity MoS2 Photodetectors with Schottky Contacts

被引：49

作者：

Sun, Yanxiao ^{[1
,2
,3
]}

Jiang, Luyue ^{[1
,2
,3
]}

Wang, Zhe ^{[1
,2
,3
]}

Hou, Zhenfei ^{[1
,2
,3
]}

Dai, Liyan ^{[1
,2
,3
]}

Wang, Yankun ^{[1
,2
,3
]}

Zhao, Jinyan ^{[1
,2
,3
]}

Xie, Ya-Hong ^{[4
]}

Zhao, Libo ^{[5
,6
]}

Jiang, Zhuangde ^{[5
,6
]}

Ren, Wei ^{[1
,2
,3
]}

Niu, Gang ^{[1
,2
,3
]}

机构：

[1] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China

[2] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Sch Elect Sci & Engn, Xian 710049, Peoples R China

[3] Xi An Jiao Tong Univ, Int Joint Lab Micro Nano Mfg & Measurement Technol, Xian 710049, Peoples R China

[4] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90024 USA

[5] Xi An Jiao Tong Univ, State Key Lab Mfg Syst Engn, Xian 710049, Peoples R China

[6] Xi An Jiao Tong Univ, Int Joint Lab Micro Nano Mfg & Measurement Technol, Xian 710049, Peoples R China

来源：

ACS NANO | 2022年 / 16卷 / 12期

基金：

中国国家自然科学基金;

关键词：

MoS2; field effect transistor; photodetector; Schottky contact; high detectivity; multiwavelengths; TRANSISTORS; RAMAN;

D O I：

10.1021/acsnano.2c06062

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Photodetection is one of the vital functions for the multifunc-tional "More than Moore" (MtM) microchips urgently required by Internet of Things (IoT) and artificial intelligence (AI) applications. The further improvement of the performance of photodetectors faces various challenges, including materials, fabrication processes, and device structures. We demonstrate in this work MoS2 photodetectors with a nanoscale channel length and a back-gate device structure. With the mechanically exfoliated six-monolayer-thick MoS2, a Schottky contact between source/drain electrodes and MoS2, a high responsivity of 4.1 x 103 A W-1, and a detectivity of 1.34 x 1013 cm Hz1/2 W-1 at 650 nm were achieved. The devices are also sensitive to multiwavelength lights, including 520 and 405 nm. The electrical and optoelectronic properties of the MoS2 photodetectors were studied in depth, and the working mechanism of the devices was analyzed. The photoinduced Schottky barrier lowering (PIBL) was found to be important for the high performance of the phototransistor.

引用

页码：20272 / 20280

页数：9

共 35 条

[31] Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment [J].

Tang, Baoshan ;

Yu, Zhi Gen ;

Huang, Li ;

Chai, Jianwei ;

Wong, Swee Liang ;

Deng, Jie ;

Yang, Weifeng ;

Gong, Hao ;

Wang, Shijie ;

Ang, Kah-Wee ;

Zhang, Yong-Wei ;

Chi, Dongzhi .

ACS NANO, 2018, 12 (03) :2506-2513

[32] Ultrasensitive negative capacitance phototransistors [J].

Tu, Luqi ;

Cao, Rongrong ;

Wang, Xudong ;

Chen, Yan ;

Wu, Shuaiqin ;

Wang, Fang ;

Wang, Zhen ;

Shen, Hong ;

Lin, Tie ;

Zhou, Peng ;

Meng, Xiangjian ;

Hu, Weida ;

Liu, Qi ;

Wang, Jianlu ;

Liu, Ming ;

Chu, Junhao .

NATURE COMMUNICATIONS, 2020, 11 (01)

[33] Tunability of Short-Channel Effects in MoS2 Field-Effect Devices [J].

Zhang, Feng ;

Appenzeller, Joerg .

NANO LETTERS, 2015, 15 (01) :301-306

[34] Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations [J].

Zhong, Hongxia ;

Quhe, Ruge ;

Wang, Yangyang ;

Ni, Zeyuan ;

Ye, Meng ;

Song, Zhigang ;

Pan, Yuanyuan ;

Yang, Jinbo ;

Yang, Li ;

Lei, Ming ;

Shi, Junjie ;

Lu, Jing .

SCIENTIFIC REPORTS, 2016, 6

[35] Robust growth of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply [J].

Zuo, Yonggang ;

Liu, Can ;

Ding, Liping ;

Qiao, Ruixi ;

Tian, Jinpeng ;

Liu, Chang ;

Wang, Qinghe ;

Xue, Guodong ;

You, Yilong ;

Guo, Quanlin ;

Wang, Jinhuan ;

Fu, Ying ;

Liu, Kehai ;

Zhou, Xu ;

Hong, Hao ;

Wu, Muhong ;

Lu, Xiaobo ;

Yang, Rong ;

Zhang, Guangyu ;

Yu, Dapeng ;

Wang, Enge ;

Bai, Xuedong ;

Ding, Feng ;

Liu, Kaihui .

NATURE COMMUNICATIONS, 2022, 13 (01)

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