1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures

被引：13

作者：

Baidus, NV ^{[1
]}

Zvonkov, BN

Mokeeva, PB

Uskova, EA

Tikhov, SV

Vasilevskiy, MI

Gomes, MJM

Filonovich, SA

机构：

[1] NI Lobachevsky State Univ, Nizhnii Novgorod 603950, Russia

[2] Univ Minho, Ctr Fis, P-4710057 Braga, Portugal

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期

关键词：

D O I：

10.1088/0268-1242/19/4/154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This communication reports the results of experimental studies of the electroluminescence (EL) of forward-biased Schottky barrier (SB) diodes fabricated on heterostructures where an InAs/GaAs quantum dot (QD) layer was placed in the space charge region. In order to reach a higher EL wavelength, the QD layer was overgrown by a thin combined GaAs/InGaAs cladding layer. The heterostructures with Au SBs were found to show pronounced EL originating from several confined exciton states in InAs QDs which is higher at 300 K than at low temperatures. It is shown that the EL wavelength can be tuned within the 1.3-1.57 mum range by changing the thickness and composition of the combined GaAs/InGaAs capping layer. We discuss possible mechanisms of the injection of holes needed for the radiative recombination in the QDs and possibilities of improving the EL quantum yield.

引用

页码：S469 / S471

页数：3

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