Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer

被引：13

作者：

Feng, Yuxia ^{[1
]}

Wei, Hongyuan ^{[1
]}

Yang, Shaoyan ^{[1
]}

Zhang, Heng ^{[1
]}

Kong, Susu ^{[1
]}

Zhao, Guijuan ^{[1
]}

Liu, Xianglin ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China

来源：

CRYSTENGCOMM | 2014年 / 16卷 / 32期

基金：

美国国家科学基金会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; BUFFER THICKNESS; STRESS; STRAIN; RELAXATION; SUBSTRATE; GROWTH;

D O I：

10.1039/c4ce01164c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The stress state and crystal quality of a metal-organic chemical vapor deposition (MOCVD)-grown GaN film on a Si(111) substrate with different AlN buffer layer thicknesses were investigated. The properties of the AlN layers with varying thicknesses were studied. The three-dimensional growth mode with a rough surface of AlN on Si was observed. A defective layer with mixed orientations of AlN grains formed at the AlN/GaN interface. The AlN buffer layer with the defective layer accommodated most of the lattice mismatch between the GaN film and the Si substrate. The significance of the defective layer was proved by the obtainment of a 1 m thick nearly crack-free GaN film with high crystal quality.

引用

页码：7525 / 7528

页数：4

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