Full C-Band Tunable DFB Laser Array Copackaged With InP Mach-Zehnder Modulator for DWDM Optical Communication Systems

被引:22
作者
Tsuzuki, Ken [1 ]
Shibata, Yasuo [1 ]
Kikuchi, Nobuhiro [1 ]
Ishikawa, Mitsuteru [1 ]
Yasui, Takako [1 ]
Ishii, Hiroyuki [1 ]
Yasaka, Hiroshi [2 ]
机构
[1] NTT Corp, Nippon Telegraph & Telephone Photon Labs, Atsugi, Kanagawa 2430198, Japan
[2] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan
关键词
Optical communication; optical modulation; packaging; semiconductor lasers;
D O I
10.1109/JSTQE.2009.2013972
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We fabricated a compact 10-Gb/s-wavelength tunable laser module by integrating a tunable DFB laser array and an InP-based n-i-n Mach-Zehnder modulator in one package. We developed a multichip assembly technology to realize high optical coupling efficiency and achieved a continuous-wave output power of +6.5 dBm. We demonstrated a full C-band 10-Gb/s optical duobinary transmission with a constant modulation voltage of 2.4 V-pp. And we achieved a 200-km single-mode-fiber transmission with a power penalty of less than 1.0 dB over the entire C-band range.
引用
收藏
页码:521 / 527
页数:7
相关论文
共 22 条
[1]  
AKIYAMA S, 2002 IEEE INT SEM LA, P57
[2]   Design and manufacturability issues of a Co-packaged DFB/MZ module [J].
Anderson, K .
49TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 1999 PROCEEDINGS, 1999, :197-200
[3]  
ANTHON D, 2004, OPT FIB COMM C LOS A
[4]  
BETTY I, P OPT FIB COMM OFC 2, P1
[5]  
GRIFFIN RA, P 2004 IEEE LEOS WOR, P39
[6]   Widely wavelength-tunable DFB laser array integrated with funnel combiner [J].
Ishii, Hiroyuki ;
Kasaya, Kazuo ;
Oohashi, Hiromi ;
Shibata, Yasuo ;
Yasaka, Hiroshi ;
Okamoto, Katsunari .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2007, 13 (05) :1089-1094
[7]  
ISHIKAWA M, P OPT COMM C OECC 20, P1
[8]   THEORY, DESIGN, AND PERFORMANCE OF EXTENDED TUNING RANGE SEMICONDUCTOR-LASERS WITH SAMPLED GRATINGS [J].
JAYARAMAN, V ;
CHUANG, ZM ;
COLDREN, LA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1824-1834
[9]   Controlled beam dry etching of InP by using Br-2-N-2 gas [J].
Oku, S ;
Shibata, Y ;
Ochiai, K .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (04) :585-591
[10]  
OOHASHI H, P IND PHOSPH REL MAT, P575