Mechanical Properties of Poly 3C-SiC Thin Films according to Carrier Gas (H2) Concentration

被引：1

作者：

Chung, Gwiy-Sang ^{[1
]}

Han, Ki-Bong ^{[1
]}

机构：

[1] Univ Ulsan, Sch Elect Engn, Ulsan, South Korea

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

Poly; 3C-SiC; Nano Indentation; AFM; Young's Modulus; Hardness; BULGE TEST; MODULUS; RATIO;

D O I：

10.4028/www.scientific.net/MSF.600-603.867

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10 % carrier gas (H(2)) concentrations using Nano-Indentation. When carrier gas (H(2)) concentration was 10 %, it has been proved that the mechanical properties, Young's Modulus and Hardness, of 3C-SiC are the best of them. In the case of 10 % carrier gas (H(2)) concentration, Young's Modulus and Hardness were obtained as 367 GPa and 36 GPa, respectively. When the surface roughness according to carrier gas (H(2)) concentrations was investigated by AFM (atomic force microscope), when carrier gas (H(2)) concentration was 10 %, the roughness of 3C-SiC thin was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin films to MEMS applications, carrier gas (H(2)) concentration's rate should increase to obtain better mechanical properties and surface roughness.

引用

页码：867 / 870

页数：4

共 7 条

[1] Mechanical properties of epitaxial 3C silicon carbide thin films [J].