Efficient hydrogen storage in boron doped graphene decorated by transition metals - A first-principles study

被引:126
作者
Nachimuthu, Santhanamoorthi [1 ]
Lai, Po-Jung [1 ]
Jiang, Jyh-Chiang [1 ]
机构
[1] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 106, Taiwan
关键词
TOTAL-ENERGY CALCULATIONS; ELASTIC BAND METHOD; ORGANIC FRAMEWORKS; CARBON NANOTUBES; SPILLOVER MECHANISM; CAPACITY; ADSORPTION; DFT;
D O I
10.1016/j.carbon.2014.02.048
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The hydrogen storage capacity of transition metal (TM) decorated boron (B) doped graphene surface through spill over mechanism have been studied using first principle calculations. Here we propose a new strategy to increase the hydrogen storage in the Bdoped graphene surface. We decorated the surface with different TM atoms with different binding energy strengths in order to enrich both adsorption as well as desorption of hydrogen at ambient conditions. We find that among the considered TM atoms, the Ni, Pd and Co atoms are suitable for decorating B-doped graphene surface, which can be adsorbed stably on the surface. Our results show that the activation energies for H atom diffusion are much smaller than the previously reported values, indicating that a fast H diffusion on this proposed surface can be achieved. Further, the desorption energy of hydrogen on the Co is between 0.49 and 1.3 eV/molecule, which is close to the energies required to obtain reversible storage at room temperature. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:132 / 140
页数:9
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