Structural characterization and phase transformation kinetics of Se58Ge42-xPbx (x=9, 12) chalcogenide glasses

被引:45
作者
Deepika [1 ]
Jain, Praveen K. [1 ]
Rathore, K. S. [1 ]
Saxena, N. S. [1 ]
机构
[1] Univ Rajasthan, Semicond & Polymer Sci Lab, Jaipur 302004, Rajasthan, India
关键词
Amorphous semiconductors; Germanium; II-VI semiconductors; Crystallization; Crystal growth; Glass ceramics; Nucleation; Crystals; X-ray diffraction; Glass formation; Glass transition; Chalcogenides; Thermal properties; CRYSTALLIZATION KINETICS; ACTIVATION-ENERGY; THERMAL-ANALYSIS; HEATING RATE; GE-SE; TRANSITION; TEMPERATURE; SYSTEM; ALLOY;
D O I
10.1016/j.jnoncrysol.2009.04.032
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The glass transition behavior and crystallization kinetics of Se58Ge42-xPbx (x = 9, 12) have been investigated using Differential Scanning Calorimetry (DSC) at five different heating rates under non-isothermal conditions. It has been observed that these glassy systems exhibit single glass transition and double crystallization on heating. The XRD pattern revealed that the considered glasses get crystallized into GeSe2 and PbSe/Se phases after annealing at 633-643 K for 2 h. The GeSe2 and Se phases were found to crystallize in monoclinic structure while, PbSe phase crystallizes in cubic structure. Besides this, a mixed phase was also observed in DSC thermograms after annealing. The kinetic studies include determination of various parameters such as Avrami exponent (n), frequency factor (K-o), dimensionality of growth (m), the activation energy for glass transition (E-t) and for crystallization (E-c). The values of E-t increases while that of E-t decreases after annealing. Also, dimensionality of growth decreases to one dimension from two and three dimensions after annealing. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1274 / 1280
页数:7
相关论文
共 22 条
[1]   Kinetics of crystallization in amorphous Se73.2Te21.1Sb5.7 under isochronal conditions:: Effect of heating rate on the activation energy [J].
Abu-Sehly, A. A. ;
Elabbar, A. A. .
PHYSICA B-CONDENSED MATTER, 2007, 390 (1-2) :196-202
[2]   CALCULATION OF AVRAMI PARAMETERS FOR HETEROGENEOUS SOLID-STATE REACTIONS USING A MODIFICATION OF KISSINGER METHOD [J].
AUGIS, JA ;
BENNETT, JE .
JOURNAL OF THERMAL ANALYSIS, 1978, 13 (02) :283-292
[3]  
Deepika, 2008, AIP P, V1004, P85, DOI DOI 10.1063/1.2927590
[4]  
Imran MMA, 2000, PHYS STATUS SOLIDI A, V181, P357, DOI 10.1002/1521-396X(200010)181:2<357::AID-PSSA357>3.0.CO
[5]  
2-H
[6]   Crystallization kinetics of CuxTi100-x (x=43, 50 and 53) glasses [J].
Jain, R ;
Saxena, NS ;
Bhandari, D ;
Sharma, SK ;
Rao, KVR .
PHYSICA B, 2001, 301 (3-4) :341-348
[7]  
Johnson W.A., 1939, T AM I MINER ENG, V135, P419
[8]   Crystallization behavior of bulk amorphous Se-Sb-In system [J].
Kaur, G ;
Komatsu, T .
JOURNAL OF MATERIALS SCIENCE, 2001, 36 (18) :4531-4533
[9]   VARIATION OF PEAK TEMPERATURE WITH HEATING RATE IN DIFFERENTIAL THERMAL ANALYSIS [J].
KISSINGER, HE .
JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1956, 57 (04) :217-221
[10]   EFFECT OF SCANNING RATE ON GLASS-TRANSITION TEMPERATURE OF SPLAT-COOLED TE-85-GE-15 [J].
LASOCKA, M .
MATERIALS SCIENCE AND ENGINEERING, 1976, 23 (2-3) :173-177