The undoped and fluorine doped thin films are synthesized by using cost-effective spray pyrolysis technique. The dependence of optical, structural and electrical properties of SnO2 films, on the concentration of fluorine is reported. Optical absorption, X-ray diffraction, scanning electron microscope (SEM) and Hall effect studies have been performed on SnO2: F ( FTO)films coated on glass substrates. The film thickness varies from 800 to 1572 nm. X-ray diffraction pattern reveals the presence of cassiterite structure with ( 2 0 0) preferential orientation for FTO films. The crystallite size varies from 35 to 66 nm. SEM and AFM study reveals the surface of FTO to be made of nanocrystalline particles. The electrical study reveals that the films are degenerate and exhibit n-type electrical conductivity. The 20 wt% F doped film has a minimum resistivity of 3.8 x 10 (4) Omega cm, carrier density of 24.9 x 10(20) cm (3) and mobility of 6.59 cm(2) V (1) s (1). The sprayed FTO film having minimum resistance of 3.42 Omega/cm(2), highest figure of merit of 6.18 x 10 (2) Omega (1) at 550 nm and 96% IR reflectivity suggest, these films are useful as conducting layers in electrochromic and photovoltaic devices and also as the passive counter electrode. (C) 2009 Elsevier B.V. All rights reserved.
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Seoul Technopk, R&BD Tech Support Div, Seoul, South KoreaSeoul Natl Univ Sci & Technol, Grad Sch NID Fus Technol, Seoul, South Korea
Kim, Youngrae
Kim, Sun-Phil
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Seoul Natl Univ Sci & Technol, Sch Mech Design & Automat Engn, Seoul, South KoreaSeoul Natl Univ Sci & Technol, Grad Sch NID Fus Technol, Seoul, South Korea
Kim, Sun-Phil
Kim, Sung-Dong
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Seoul Natl Univ Sci & Technol, Sch Mech Design & Automat Engn, Seoul, South KoreaSeoul Natl Univ Sci & Technol, Grad Sch NID Fus Technol, Seoul, South Korea
Kim, Sung-Dong
Kim, Sarah Eunkyung
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Seoul Natl Univ Sci & Technol, Grad Sch NID Fus Technol, Seoul, South KoreaSeoul Natl Univ Sci & Technol, Grad Sch NID Fus Technol, Seoul, South Korea
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Ji, ZG
Zhao, LN
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhao, LN
He, ZP
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
He, ZP
Zhou, Q
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhou, Q
Chen, C
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
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AVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
Ravichandran, K.
Anandhi, R.
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AVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
Anandhi, R.
Karthika, K.
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AVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
Karthika, K.
Rajkumar, P. V.
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AVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
Rajkumar, P. V.
Dineshbabu, N.
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AVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
Dineshbabu, N.
Ravidhas, C.
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Bishop Heber Coll Autonomous, Dept Phys, Tiruchirappalli 620017, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India