Effect of fluorine doping on highly transparent conductive spray deposited nanocrystalline tin oxide thin films

被引:144
作者
Moholkar, A. V. [1 ]
Pawar, S. M. [2 ]
Rajpure, K. Y. [3 ]
Bhosale, C. H. [3 ]
Kim, J. H. [2 ]
机构
[1] Gopal Krishna Gokhale Coll, Dept Phys & Elect, Thin Film Lab, Kolhapur 416012, Maharashtra, India
[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea
[3] Shivaji Univ, Dept Phys, Elect Mat Lab, Kolhapur 416004, Maharashtra, India
关键词
FTO thin films; Spray pyrolysis; Van der Pauw technique; X-ray diffraction; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; SUBSTRATE-TEMPERATURE; SNO2; FILMS; ZNO; GROWTH; DEPENDENCE; PYROLYSIS; MECHANISM;
D O I
10.1016/j.apsusc.2009.07.035
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The undoped and fluorine doped thin films are synthesized by using cost-effective spray pyrolysis technique. The dependence of optical, structural and electrical properties of SnO2 films, on the concentration of fluorine is reported. Optical absorption, X-ray diffraction, scanning electron microscope (SEM) and Hall effect studies have been performed on SnO2: F ( FTO)films coated on glass substrates. The film thickness varies from 800 to 1572 nm. X-ray diffraction pattern reveals the presence of cassiterite structure with ( 2 0 0) preferential orientation for FTO films. The crystallite size varies from 35 to 66 nm. SEM and AFM study reveals the surface of FTO to be made of nanocrystalline particles. The electrical study reveals that the films are degenerate and exhibit n-type electrical conductivity. The 20 wt% F doped film has a minimum resistivity of 3.8 x 10 (4) Omega cm, carrier density of 24.9 x 10(20) cm (3) and mobility of 6.59 cm(2) V (1) s (1). The sprayed FTO film having minimum resistance of 3.42 Omega/cm(2), highest figure of merit of 6.18 x 10 (2) Omega (1) at 550 nm and 96% IR reflectivity suggest, these films are useful as conducting layers in electrochromic and photovoltaic devices and also as the passive counter electrode. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:9358 / 9364
页数:7
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