Laser properties of different Nd-doped concentration Nd:YVO4 laser crystals

被引：39
作者：
Zhang, HJ [1 ]
Liu, JH
Wang, JY
Wang, CQ
Zhu, L
Shao, ZS
Meng, XL
Hu, XB
Chow, YT
Jiang, MH
机构：
[1] Shandong Univ, Natl Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Shandong Univ, Inst Crystal Mat, Jinan 250100, Peoples R China
[3] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
来源：
OPTICS AND LASERS IN ENGINEERING | 2002年 / 38卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Nd : YVO4 crystal; laser properties;
D O I：
10.1016/S0143-8166(02)00072-6
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The laser outputs of 1.26, 0.95, 0.5 and 0.32 at% Nd-doped concentrations in Nd:YVO4 crystal samples were performed under high pumping power of laser diode. The reason of different Nd-doped concentrations in Nd:YVO4 crystals influencing on the laser output properties was explained. The intracavity double frequency laser outputs of Nd:YVO4 crystal at 532 and 671 nm were also performed. Our experimental results show that the optimum Nd-doped concentration in Nd:YVO4 crystal is about 0.5 at% under a pumping power of 30 W. (C) 2002 Published by Elsevier Science Ltd.
引用
收藏
页码：527 / 536
页数：10
相关论文
共 17 条
[1]  
Anderson SG, 2001, LASER FOCUS WORLD, V37, P5
[2]   Design criteria for concentration optimization in scaling diode end-pumped lasers to sigh powers: Influence of thermal fracture [J].
Chen, YF .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (02) :234-239
[3]   GROWTH AND CHARACTERIZATION OF PURE AND RARE-EARTH SUBSTITUTED YVO4 [J].
CHOW, K ;
MCKNIGHT, HG .
MATERIALS RESEARCH BULLETIN, 1973, 8 (12) :1343-1350
[4]  
DESS HM, 1967, T METALL SOC AIME, V239, P359
[5]   GROWTH OF OXYGEN DEFICIENCY-FREE YVO(4) SINGLE-CRYSTAL BY TOP-SEEDED SOLUTION GROWTH TECHNIQUE [J].
ERDEI, S .
JOURNAL OF CRYSTAL GROWTH, 1993, 134 (1-2) :1-13
[6]   HIGHLY EFFICIENT ND-YVO4 DIODE-LASER END-PUMPED LASER [J].
FIELDS, RA ;
BIRNBAUM, M ;
FINCHER, CL .
APPLIED PHYSICS LETTERS, 1987, 51 (23) :1885-1886
[7]  
IZAWA T, 1998, TECHNICAL DIGEST SER
[8]   Guiding effects in Nd:YVO4 microchip lasers operating well above threshold [J].
Kemp, AJ ;
Conroy, RS ;
Friel, GJ ;
Sinclair, BD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (04) :675-681
[9]   Growth, morphology and laser performance of Nd:YVO4 crystal [J].
Meng, XL ;
Zhu, L ;
Zhang, HJ ;
Wang, CQ ;
Chow, YT ;
Lu, MK .
JOURNAL OF CRYSTAL GROWTH, 1999, 200 (1-2) :199-203
[10]   INCLUSIONS IN YTTRIUM VANADATE CRYSTALS [J].
MORRISON, AD .
JOURNAL OF MATERIALS SCIENCE, 1973, 8 (11) :1666-1669
12