n-type conductivity in ultrananocrystalline diamond films

被引：138
作者：
Williams, OA
Curat, S
Gerbi, JE
Gruen, DM
Jackman, RB
机构：
[1] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
[2] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
[3] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 10期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.1785288
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hall effect measurements have been carried out to determine the carrier density and mobilities in ultrananocrystalline diamond films grown with added nitrogen. The results show clear n-type conductivity with very low thermal activation energy. Mobility values of 1.5 cm(2) V(-1) s(-1) are found for a sheet carrier concentration of 2x10(17) cm(-2). These measurements indicate that ultrananocrystalline films grown with high nitrogen levels in the growth gas mixture can have bulk carrier concentrations of up to 10(21), which is very high for diamond films. The n-type nature of this material was also confirmed by Seebeck effect measurements. (C) 2004 American Institute of Physics.
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页码：1680 / 1682
页数：3
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