Gas-Sensing Characteristics of Exfoliated WSe2 Field-Effect Transistors

被引：41
作者：
Hong, Yoonki
Kang, Won-Mook
Cho, In-Tak
Shin, Jongmin
Wu, Meile
Lee, Jong-Ho [1 ]
机构：
[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 151742, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2017年 / 17卷 / 05期
关键词：
Tungsten Diselenide; Gas Sensor; Field-Effect Transistor; Mechanical Exfoliation; CHEMICAL SENSORS; MOS2;
D O I：
10.1166/jnn.2017.14039
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A WSe2 field-effect transistor-based gas sensor is prepared and its gas-sensing performance is investigated. A highly n-doped silicon is used as a back-gate electrode and a WSe2 flake transferred from bulk WSe2 crystal is used as a gas-sensing layer, which acts as a p-type channel. The sensing characteristics of the sensor are measured for four target gases (NO2, SO2, NH3, H2S) at 25 degrees C. At a fixed concentration of 1 ppm, drain currents are changed by 347%, 72%, 16% and 26% in NO2, NH3, SO2 and H2S, respectively. The sensing mechanisms for oxidizing (NO2 and SO2) and reducing (NH3 and H2S) gases are explained.
引用
收藏
页码：3151 / 3154
页数：4
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