High-power diode-pumped actively Q-switched Nd:YVO4 self-Raman laser:: influence of dopant concentration

被引：132
作者：
Chen, YF [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan
来源：
OPTICS LETTERS | 2004年 / 29卷 / 16期
关键词：
D O I：
10.1364/OL.29.001915
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Efficient self-Raman frequency conversion from a diode-pumped actively Q-switched Nd:YVO4 laser at 1064 nm to Stokes emission. at 1176 nm is achieved for the first time to the author's knowledge. With a 0.2-at. % Nd:YVO4 crystal, greater than 1.5 W of power at a wavelength of 1176 nm at a repetition rate of 20 kHz was generated with a diode pump power of 10.8 W, corresponding to 4 conversion of 13.9%. Pulse width and peak power were 18 ns and 4.2 kW, respectively. (C) 2004 Optical Society of America.
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页码：1915 / 1917
页数：3
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