Application of quantum chemistry to nanotechnology: electron and spin transport in molecular devices

被引:109
作者
Kim, Woo Youn [1 ]
Choi, Young Cheol [1 ]
Min, Seung Kyu [1 ]
Cho, Yeonchoo [1 ]
Kim, Kwang S. [1 ]
机构
[1] Pohang Univ Sci & Technol, Dept Chem, Ctr Superfunct Mat, Pohang 790784, South Korea
关键词
NEGATIVE DIFFERENTIAL RESISTANCE; CURRENT-VOLTAGE CHARACTERISTICS; RANDOM-ACCESS MEMORY; CARBON NANOTUBE; SINGLE MOLECULES; AB-INITIO; CONDUCTANCE; NANOWIRE; JUNCTIONS; GRAPHENE;
D O I
10.1039/b820003c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Rapid progress of nanotechnology requires developing novel theoretical methods to explain complicated experimental results and predict new functions of nanodevices. Thus, for the last decade, one of the challenging works of quantum chemistry is to understand the electron and spin transport phenomena in molecular devices. This critical review provides an extensive survey of on-going research and its current status in molecular electronics with the focus on theoretical applications to diverse types of devices along with a brief introduction of theoretical methods and its practical implementation scheme. The topics cover diverse molecular devices such as molecular wires, rectifiers, field effect transistors, electrical and optical switching devices, nanosensors, spin-valve devices, negative differential resistance devices and inelastic electron tunnelling spectroscopy. The limitations of the presented method and the possible approaches to overcome the limitations are addressed (183 references).
引用
收藏
页码:2319 / 2333
页数:15
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