Effects of complexing agent on earth-abundant environmentally friendly Cu2ZnSnS4 thin film solar cells prepared by sol-gel deposition

被引:8
作者
Chaudhari, J. J. [1 ]
Joshi, U. S. [1 ]
机构
[1] Gujarat Univ, Sch Sci, Dept Phys, Ahmadabad 380009, Gujarat, India
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2018年 / 124卷 / 07期
关键词
PRECURSOR LAYERS; SULFURIZATION; SCATTERING;
D O I
10.1007/s00339-018-1876-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Solution-processed Cu2ZnSnS4 (CZTS) thin film growth parameters using complexing agent triethanolamine (TEA) have been optimized. Effects of TEA on structural, morphological, optical and electrical properties of CZTS thin films were systematically investigated. X-ray diffraction and Raman spectroscopy of annealed CZTS thin films confirmed a pure kesterite structure with optimized TEA concentration. Surface morphology of CZTS films were analyzed by field emission scanning electron microscope and atomic force microscope, which revealed a smooth surface and systematic grain growth formation with varying TEA concentrations. p-Type conductivity was confirmed using Hall measurements and the effect of TEA concentration on electrical properties is investigated. X-ray photoelectron spectroscopy demonstrated absence of secondary phases and stoichiometric atomic ratios of multicationic quaternary CZTS thin film grown without sulphurization. UV-Vis spectra revealed a direct energy band gap ranging from 1.90 to 1.40 eV, which was found to depend upon the TEA concentration. Such band gap values are optimum for semiconductor material as an absorber layer of thin film solar cells. The CZTS thin film was further used for the fabrication of a solar cell of structure SLG/FTO/ZnO/CZTS/Al. The best solar cell showed a short-circuit current density (J (sc)) of 10.78 mA/cm(2), open circuit voltage (V (oc)) of 0.27 V, fill factor (FF) of 37% and power conversion efficiency (eta) of 1.08% under air mass 1.5 (100 mW cm(-2)) illumination.
引用
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页码:1 / 9
页数:9
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[1]   Synthesis of simple, low cost and benign sol-gel Cu2ZnSnS4 thin films: influence of different annealing atmospheres [J].
Agawane, G. L. ;
Shin, S. W. ;
Vanalakar, S. A. ;
Suryawanshi, M. P. ;
Moholkar, A. V. ;
Yun, Jae Ho ;
Gwak, Jihye ;
Kim, Jin Hyeok .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (03) :1900-1907
[2]  
[Anonymous], 2013, PROG PHOTOVOLT
[3]  
[Anonymous], THIN SOLID FILMS
[4]  
[Anonymous], ELEMENTS XRAY DIFFRA
[5]  
[Anonymous], J PHOTONICS ENERGY
[6]   Surface and grain boundary scattering in nanometric Cu thin films: A quantitative analysis including twin boundaries [J].
Barmak, Katayun ;
Darbal, Amith ;
Ganesh, Kameswaran J. ;
Ferreira, Paulo J. ;
Rickman, Jeffrey M. ;
Sun, Tik ;
Yao, Bo ;
Warren, Andrew P. ;
Coffey, Kevin R. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (06)
[7]   Fabrication of Cu2ZnSnS4 films by sulfurization of Cu/ZnSn/Cu precursor layers in sulfur atmosphere for solar cells [J].
Chalapathy, R. B. V. ;
Jung, Gwang Sun ;
Ahn, Byung Tae .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (12) :3216-3221
[8]   Earth-abundant non-toxic Cu2ZnSnS4 thin films by direct liquid coating from metal-thiourea precursor solution [J].
Chaudhuri, Tapas Kumar ;
Tiwari, Devendra .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 101 :46-50
[9]   A DIP-DRY PROCESS FOR PREPARING PHOTOSENSITIVE FILMS OF PBS FOR THERMOPHOTOVOLTAIC APPLICATIONS [J].
CHAUDHURI, TK ;
ACHARYA, HN ;
NAYAK, BB .
THIN SOLID FILMS, 1981, 83 (04) :L169-L172
[10]   Imaging and phase identification of Cu2ZnSnS4 thin films using confocal Raman spectroscopy [J].
Cheng, A-J ;
Manno, M. ;
Khare, A. ;
Leighton, C. ;
Campbell, S. A. ;
Aydil, E. S. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2011, 29 (05)