Fluoropolymer coatings for improved carbon nanotube transistor device and circuit performance

被引：27

作者：

Jang, Seonpil ^{[1
]}

Kim, Bongjun ^{[1
]}

Geier, Michael L. ^{[2
,3
]}

Prabhumirashi, Pradyumna L. ^{[2
,3
]}

Hersam, Mark C. ^{[2
,3
]}

Dodabalapur, Ananth ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[3] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 12期

关键词：

FIELD-EFFECT TRANSISTOR; THRESHOLD VOLTAGE; ELECTRONICS; MEMORY; GATE;

D O I：

10.1063/1.4895069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the marked improvements in key device characteristics of single walled carbon nanotube (SWCNT) field-effect transistors (FETs) by coating the active semiconductor with a fluoropolymer layer such as poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE). The observed improvements include: (i) A reduction in off-current by about an order of magnitude, (ii) a significant reduction in the variation of threshold voltage, and (iii) a reduction in bias stress-related instability and hysteresis present in device characteristics. These favorable changes in device characteristics also enhance circuit performance and the oscillation amplitude, oscillation frequency, and increase the yield of printed complementary 5-stage ring oscillators. The origins of these improvements are explored by exposing SWCNT FETs to a number of vapor phase polar molecules which produce similar effects on the FET characteristics as the PVDF-TrFE. Coating of the active SWCNT semiconductor layer with a fluoropolymer will be advantageous for the adoption of SWCNT FETs in a variety of printed electronics applications. (C) 2014 AIP Publishing LLC.

引用

页数：5

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