The diffusion of Pt in BST films on Pt/Ti/SiO2/Si substrate by sol-gel method

被引：19

作者：

Hu, Wencheng ^{[1
]}

Yang, Chuanren ^{[1
]}

Zhang, Wanli ^{[1
]}

Liu, Guijun ^{[1
]}

Dong, Dong ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2006年 / 39卷 / 03期

关键词：

barium strontium titanate; thin film; Auger electron spectroscopy; x-ray photoelectron spectrum; Pt diffusion;

D O I：

10.1007/s10971-006-7809-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Barium strontium titanate (Ba0.65Sr0.35TiO3) ferroelectric thin films have been prepared by sol-gel method on Pt/Ti/SiO2/Si substrate. The X-ray diffraction (XRD) pattern indicated that the films were a polycrystalline perovskite structure and the atomic force microscope (AFM) image showed that the crystallite size and the root mean square roughness (RMS) were 90 nm and 3.6 nm, respectively. The X-ray photoelectron spectrum (XPS) images showed that Pt consisting in BST thin films was the metallic state, and the Auger electron spectroscopy (AES) analysed the Pt concentration in different depth profiles of BST thin films. The result displayed that the Pt diffusion in BST thin film is divided into two regions: near the BST/Pt interface, the diffusion type was volume diffusion, and far from the interface correspondingly, the diffusion type became grain boundary diffusion. In this paper, the previous researcher's result was used to verify our conclusion.

引用

页码：293 / 298

页数：6

共 24 条

[1] A novel low-temperature (Ba,Sr)TiO3 (BST) process with Ti/TiN barrier for Gbit DRAM applications [J].