Magnetron sputter deposition: Linking discharge voltage with target properties

被引:170
作者
Depla, D. [1 ]
Mahieu, S. [1 ]
De Gryse, R. [1 ]
机构
[1] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium
关键词
Sputtering; Electron emission; Reactive deposition; INDUCED ELECTRON-EMISSION; BULK MODULUS; OPTICAL-EMISSION; MODEL; IONS; ENERGY; OXYGEN; FILMS; ARGON; TEMPERATURE;
D O I
10.1016/j.tsf.2008.11.108
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The discharge voltage is perhaps the most accessible parameter of the magnetron sputter deposition process. As its value can be easily monitored, research reports generally contain its value. Nevertheless, the interpretation of the discharge voltage and/or its behavior, especially during reactive magnetron sputtering, is less straightforward. To understand its behavior, it is necessary to look into the details of the magnetron discharge, the processes occurring at the cathode (or target) and the influence of the important discharge parameters such as discharge current, magnet configuration, and discharge gas pressure. The influence of these parameters can be partially understood from a general formula. This formula, based on the original work of Thornton. shows that the discharge voltage behavior during reactive magnetron sputtering finds its origin in the formation of a compound layer on the target. The discharge voltage behavior depends strongly on the material properties of the compound layer which is formed. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:2825 / 2839
页数:15
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