Strain-Induced Metastable Topological Networks in Laser-Fabricated TaS2 Polytype Heterostructures for Nanoscale Devices

被引:17
作者
Ravnik, Jan [1 ]
Vaskivskyi, Igor [2 ]
Gerasimenko, Yaroslav [2 ]
Diego, Michele [1 ]
Vodeb, Jaka [1 ]
Kabanov, Viktor [1 ]
Mihailovic, Dragan D. [1 ,2 ]
机构
[1] Jozef Stefan Inst, Complex Matter Dept, Jamova 39, SI-1000 Ljubljana, Slovenia
[2] Ctr Excellence Nanosci & Nanotechnol Nanoctr CENN, Jamova 39, SI-1000 Ljubljana, Slovenia
关键词
2D materials; TaS2; polytype transformation; self-assembled networks; topology; CHARGE-DENSITY-WAVE; COMMENSURATE-INCOMMENSURATE TRANSITION; SUPERCONDUCTIVITY; 1T-TAS2; STATE;
D O I
10.1021/acsanm.9b00644
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The stacking of layered materials into heterostructures offers diverse possibilities for generating deformed moire states arising from their mutual interaction. Here we report self-assembled two-dimensional nanoscale strain networks formed within a single prismatic (H) polytype monolayer of TaS2 created in situ on the surface of an orthorhombic 1T-TaS2 single crystal by a low-temperature laser-induced polytype transformation. The networks revealed by scanning tunneling microscopy (STM) take on diverse configurations at different temperatures, including extensive double stripes and a twisted 3-gonal mesh of connected 6-pronged vertices. The resulting phase diagram can be understood to be a consequence of thermally driven minimization of discommensurations between the H and 1T layers. Nontrivial dislocation defects of embedded 2- and 4-gonal structures are shown to be associated with local inhomogeneous strains. The creation of metastable heterostructures by laser quench at cryogenic temperatures in combination with STM manipulation of local strain demonstrates nanoscale control of topological defects in transition metal dichalcogenide heterostructures may be utilized in the fabrication of nanoscale electronic devices and neural networks.
引用
收藏
页码:3743 / 3751
页数:17
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