Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes

被引：37
作者：
Dong, Peng [1 ]
Yan, Jianchang [1 ]
Zhang, Yun [1 ]
Wang, Junxi [1 ]
Geng, Chong [2 ]
Zheng, Haiyang [1 ]
Wei, Xuecheng [1 ]
Yan, Qingfeng [2 ]
Li, Jinmin [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China
[2] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
来源：
OPTICS EXPRESS | 2014年 / 22卷 / 05期
关键词：
QUANTUM-WELL STRUCTURES; NANOSPHERE LITHOGRAPHY; EFFICIENCY; NITRIDE; NANOROD; SPECTROSCOPY; FIELDS;
D O I：
10.1364/OE.22.00A320
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Nanopillar AlGaN/GaN multiple quantum wells ultraviolet lightemitting diodes (LEDs) were fabricated by nanosphere lithography and dry-etching. The optical properties of the nanopillar LEDs were characterized by both temperature-dependent and time-resolved photoluminescence measurements. Compared to an as-grown sample, the nanopillar sample has a PL emission peak blue-shift of 7 meV, a 42% enhanced internal quantum efficiency at room temperature and a reduced radiative recombination lifetime from 870 picosecond to 621 picosecond at 7K. These results are directly from the suppressed quantum confined stark effect that is due to the strain relaxation in the nanopillar MQWs, further revealed by micro-Raman measurement. Additionally, finite-difference time domain simulation also proves better light extraction efficiency in the nanopillar LEDs. (C)2014 Optical Society of America
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收藏
页码：A320 / A327
页数：8
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